Model/Brand/Package
Category/Description
Inventory
Price
Data
-
![]()
Category: MOSpipeDescription: 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package83201+$45.124110+$42.5351100+$40.6117250+$40.3158500+$40.01991000+$39.68712500+$39.39125000+$39.2062 -
![]()
Category: MOSpipeDescription: NChannel, 600V, 11A, 600m Ω @ 10V653210+$11.1312100+$10.5746500+$10.20361000+$10.18502000+$10.11085000+$10.01817500+$9.943910000+$9.9068 -
![]()
Category: MOSpipeDescription: 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagel4363 -
![]()
Category: MOSpipeDescription: 500V,20A,Single N-channel power MOSFET66571+$66.351610+$63.4667100+$62.9474250+$62.5435500+$61.90891000+$61.62042500+$61.21655000+$60.8703 -
![]()
Category: MOSpipeDescription: VISHAY IRFP450PBF. Transistor, MOSFET, N-channel, 14 A, 500 V, 400 Mohm, 10 V, 4 V16375+$16.015050+$15.3306200+$14.9473500+$14.85151000+$14.75572500+$14.64625000+$14.57777500+$14.5093 -
![]()
Category: MOSpipeDescription: NChannel, 500V, 14A, 400m Ω @ 10V24021+$43.468610+$40.9745100+$39.1217250+$38.8367500+$38.55171000+$38.23102500+$37.94605000+$37.7678 -
![]()
Category: MOSpipeDescription: N Channel MOSFET, 500V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor73515+$13.071250+$12.5126200+$12.1998500+$12.12161000+$12.04342500+$11.95405000+$11.89827500+$11.8423 -
![]()
Category: MOSpipeDescription: INFINEON IRFP360PBF Transistor, MOSFET, N-channel, 23 A, 400 V, 200 Mohm, 10 V, 4 V47675+$23.010450+$22.0270200+$21.4764500+$21.33871000+$21.20102500+$21.04375000+$20.94547500+$20.8470 -
![]()
Category: MOSpipeDescription: VISHAY IRFP350PBF Field effect transistor, MOSFET, N-channel544910+$9.8880100+$9.3936500+$9.06401000+$9.04752000+$8.98165000+$8.89927500+$8.833310000+$8.8003 -
![]()
Category: MOSpipeDescription: Power MOSFET30705+$29.776550+$28.5040200+$27.7914500+$27.61331000+$27.43512500+$27.23155000+$27.10437500+$26.9770 -
![]()
Category: MOSpipeDescription: NChannel, 250V, 23A, 125m Ω @ 10V48595+$6.467925+$5.988850+$5.6534100+$5.5097500+$5.41382500+$5.29415000+$5.246110000+$5.1743 -
![]()
Category: MOSpipeDescription: Power MOSFET81435+$12.278050+$11.7533200+$11.4594500+$11.38601000+$11.31252500+$11.22865000+$11.17617500+$11.1236 -
![]()
Category: MOSpipeDescription: MOSFET N-CH 100V 41A TO-247AC12935+$16.800050+$16.0821200+$15.6800500+$15.57951000+$15.47902500+$15.36415000+$15.29237500+$15.2205 -
![]()
Category: MOSpipeDescription: N Channel MOSFET, 60V to 90V, Vishay Semiconductor57205+$14.137150+$13.5330200+$13.1946500+$13.11011000+$13.02552500+$12.92885000+$12.86847500+$12.8080 -
![]()
Category: MOSpipeDescription: Infineon CoolMOS E6 Series Si N-channel MOSFET IPW65R280E6FKSA1, 13.8 A, Vds=700 V, 3-pin TO-247 package42035+$12.286250+$11.7611200+$11.4671500+$11.39361000+$11.32012500+$11.23615000+$11.18367500+$11.1311 -
![]()
Category: MOSpipeDescription: TO-247 N-CH 900V 15A75721+$57.107010+$53.8304100+$51.3963250+$51.0218500+$50.64731000+$50.22612500+$49.85165000+$49.6175 -
![]()
Category: MOSpipeDescription: QFET® N Channel MOSFET, over 31A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage（401110+$8.7072100+$8.2718500+$7.98161000+$7.96712000+$7.90905000+$7.83657500+$7.778410000+$7.7494 -
![]()
Category: Schottky diodeDescription: thinQ! Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Silicon carbide Schottky diode devices have significant advantages in providing high-voltage power semiconductor characteristics, such as increasing breakdown electric field strength and enhancing thermal conductivity, thereby improving efficiency. The latest generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, as well as PC Silverboxes and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon84721+$41.849710+$39.4485100+$37.6647250+$37.3903500+$37.11581000+$36.80712500+$36.53275000+$36.3612 -
![]()
Category: MOSpipeDescription: Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,8737 -
![]()
Category: MOSpipeDescription: VISHAY IRFP450APBF.. Transistor, MOSFET, N-channel, 14 A, 500 V, 400 Mohm, 10 V, 4 V786010+$11.9100100+$11.3145500+$10.91751000+$10.89772000+$10.81835000+$10.71907500+$10.639610000+$10.5999 -
![]()
Category: Diode arrayDescription: Ultrafast Soft Recovery Diode, 2 x 15 A83435+$15.468650+$14.8075200+$14.4373500+$14.34481000+$14.25222500+$14.14655000+$14.08047500+$14.0143 -
![]()
Category: Power diodeDescription: 1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packagem6290
